We appreciate your interest in Micro Uspd Inc part number 652-591GS810FU, which is currently ready for procurement here on Prompt Aerospace. For your reference, part number 652-591GS810FU is listed with the NSN 5961-00-027-3749 and description “Semiconductor Devices Unitized.” If this is the item you are seeking and you would like to request a quote for your comparisons, simply complete the form below with information like your desired quantity, budget, and anticipated fulfillment timeframe. We regularly respond to requests within 15 minutes of receiving them, using the details we are offered to curate the most ideal purchasing options.
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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5961-00-027-3749 Item Description: Semiconductor Devices Unitized | 5961 | 000273749 | 0 | N | ||
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | S | |||||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
652-591gs810fu | 9 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | GLASS AND METAL |
ABHP | OVERALL LENGTH | 0.422 INCHES NOMINAL |
ABJT | TERMINAL LENGTH | 0.750 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.085 INCHES MAXIMUM |
ASKA | COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE DIODE |
AXGY | MOUNTING METHOD | TERMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM REVERSE VOLTAGE, PEAK 2ND SEMICONDUCTOR DEVICE DIODE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 12.0 NOMINAL NOMINAL REGULATOR VOLTAGE 1ST SEMICONDUCTOR DEVICE DIODE |
CTQS | VOLTAGE TOLERANCE IN PERCENT | -2.4/+2.4 1ST SEMICONDUCTOR DEVICE DIODE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 65.00 MILLIAMPERES SOURCE CUTOFF CURRENT HORSEPOWER METRIC 1ST SEMICONDUCTOR DEVICE DIODE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 750.00 MILLIAMPERES FORWARD CURRENT, AVERAGE ABSOLUTE 2ND SEMICONDUCTOR DEVICE DIODE |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
FEAT | SPECIAL FEATURES | ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN |
PMLC | PRECIOUS MATERIAL AND LOCATION | LEADS SILVER |
PRMT | PRECIOUS MATERIAL | SILVER |
TEST | TEST DATA DOCUMENT | 26512-GS810FU DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAW |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
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